Development of a Cu and W Compatible PERR Clean in BEOL Advanced Interconnect Patterning. (11th September 2015)

• Record Type: Journal Article
• Authors: Kesters, Els; Le, Quoc Toan; Decoster, Stefan; Vega Gonzalez, Victor; Holsteyns, Frank; De Gendt, Stefan
• Is Part Of: ECS transactions. Volume 69:Number 8(2015)
• Page Start: 207
• Page End: 214
• Publication Date: 2015-09-11
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06908.0207ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Low-k integration for 22 nm ½ pitch technology requires continuous development of compatible cleaning processes. In this paper the use of acidic (pH:0.5-3) and alkaline (pH:8-13.5) aqueous based chemistries are demonstrated for the removal of post-etch residues after low-k etch and the aim to remove the TiN HM. These chemistries are also compatible with W and Cu, respectively. At the same time, no decrease in CD was observed, which means that the exposed low-k material was not attacked by the cleaning processes used.