(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. (10th September 2015)

• Record Type: Journal Article
• Authors: Chalker, Paul Raymond; Marshall, Paul A; Dawson, Karl; Sutcliffe, Christopher J; Brunell, Ian F; Sedghi, Naser; Hall, Stephen; Potter, Richard J
• Is Part Of: ECS transactions. Volume 69:Number 7(2015)
• Page Start: 139
• Page End: 145
• Publication Date: 2015-09-10
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06907.0139ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Conventional atomic layer deposition (ALD) is a thermo-chemical process where co-reagents are sequentially pulsed in cycles onto a heated substrate. As an alternative to substrate heating, various forms of other "non-thermal" ALD processes are being investigated. Herein, the photochemical atomic layer deposition of Al2 O3 and TiO2 thin films at 60°C is reported using a shuttered vacuum ultraviolet light source to excite molecular oxygen as a co-reagent with the metal precursors. The growth mechanisms using trimethyl aluminium and titanium tetraisopropoxide precursors, are investigated using in-situ quartz crystal microbalance and post-deposition ellipsometric measurements. The photochemical ALD Al2 O3 films exhibit different capacitance equivalent thicknesses for irradiated and masked regions respectively, even after post-deposition annealing. The photochemical ALD titania films are amorphous and when incorporated into Pt / TiO2 / Pt metal - insulator - metal structures, the titania exhibits a resistive switching behavior.