Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Dynamic Switching in Oxide Memristors. (8th September 2015)

• Record Type: Journal Article
• Authors: Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R; Marinella, Matthew
• Is Part Of: ECS transactions. Volume 69:Number 5(2015)
• Page Start: 183
• Page End: 193
• Publication Date: 2015-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06905.0183ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.