(Invited) Potential and Activities of III-V/Si Tandem Solar Cells. (10th September 2015)

• Record Type: Journal Article
• Authors: Yamaguchi, Masafumi; Lee, K-H; Araki, K; Kojima, N; Ohshita, Y
• Is Part Of: ECS transactions. Volume 69:Number 4(2015)
• Page Start: 11
• Page End: 20
• Publication Date: 2015-09-10
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06904.0011ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The paper presents efficiency potential of III-V/Si tandem solar cells with efficiencies of more than 35% under 1-sun AM1.5G and effects of dislocation upon solar cell properties of III-V-on-Si single-junction solar cells and III-V/Si tandem solar cells. Because III-V/Si system has large lattice mismatching and difference in thermal expansion coefficient, generation of misfit and thermal stress induced dislocations affect on solar cell properties. Effects of dislocations upon minority-carrier lifetime are derived from considering one dimensional transport of minority carriers to dislocations. In order to realize high efficiency solar cells with similar efficiency by homo-epitaxially grown solar cells, low density dislocation of less than 3x10 5 cm -2 is necessary. This paper also reviews approaches on reduction in dislocation density in III-V compound films on Si and improvements in efficiencies of III-V compound single-junction solar cells on Si substrates and III-V/Si tandem solar cells.