(Invited) Simulation and Modeling of the Switching Dynamics in Resistive Switching Devices. (9th September 2015)

• Record Type: Journal Article
• Authors: Menzel, Stephan
• Is Part Of: ECS transactions. Volume 69:Number 3(2015)
• Page Start: 19
• Page End: 32
• Publication Date: 2015-09-09
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06903.0019ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Resistive switching devices based on the electrochemical mechanism (ECM) or the valence change mechanism (VCM) have attracted great attention due to their potential use in future non-volatile memories. The paper presents physics-based simulation models for ECM and VCM cells that can reproduce the key switching phenomena: I-V characteristics, highly nonlinear switching kinetics and multilevel switching. The physical processes that lead to the nonlinear switching kinetics will be discussed in detail.