Electrically Scaled Hafnium Oxide Based Ge Devices. (19th August 2016)

• Record Type: Journal Article
• Authors: Tapily, Kandabara; Dey, Sonal; Consiglio, Steven; Clark, Robert D.; Wajda, Cory S.; Leusink, Gert J.; Diebold, Alain C.
• Is Part Of: ECS transactions. Volume 75:Number 5(2016)
• Page Start: 135
• Page End: 140
• Publication Date: 2016-08-19
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07505.0135ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Hfx Zr1-x O2 (0≤x≤1) films with different Hf/(Hf+Zr) ratios were deposited on Al2 O3 passivated Ge by atomic layer deposition (ALD) combined with a cyclical deposition and annealing scheme (termed DADA) in which an annealing was performed after every 20 ALD cycles. A post microwave plasma treatment was conducted after the high-k deposition. Metal oxide semiconductor capacitors (MOSCAPs) using ALD TiN metal gates were fabricated to investigate the electrical properties of the ALD Hfx Zr1-x O2 thin films. The electrical measurements show significant electrical benefits compared to samples that were not deposited using method described above. The electrical results were corroborated by synchrotron X-ray diffraction measurement