Advanced Wet Clean Technology at Lightly Doped Drain Layers in FinFET. (19th August 2016)

• Record Type: Journal Article
• Authors: Li, Jian; Sih, Vincent; Zhan, Hui
• Is Part Of: ECS transactions. Volume 75:Number 5(2016)
• Page Start: 185
• Page End: 190
• Publication Date: 2016-08-19
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07505.0185ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : An advanced wet clean method to utilize piezoelectric nozzle head for fine-controlled dual-fluid sprays based on single wafer clean toolset was demonstrated on FinFET production wafers that surface particles were reduced by as much as 26% without sacrifice of gate pattern damage in sensitive lightly doped drain layers. Additionally, about 5% yield improvement was observed for using the new clean method. The fine-controlled dual-fluid sprays improved the cleaning efficiency significantly in the "physicochemical" way and reduced the potential for pattern damage caused by variations in liquid droplet size and velocity.