Effect of Displacement Deposition on Platinum Deposition within Nanoporous Silicon. (18th September 2015)

• Record Type: Journal Article
• Authors: Koyama, Akira; Fukami, Kazuhiro; Koda, Ryo; Sakka, Tetsuo; Abe, Takeshi; Kitada, Atsushi; Murase, Kuniaki
• Is Part Of: ECS transactions. Volume 69:Number 2(2015)
• Page Start: 29
• Page End: 35
• Publication Date: 2015-09-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06902.0029ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The contribution of platinum (Pt) displacement deposition within the nanoporous silicon (Si) electrode during electrodepostion is reported. Time variations of the amount of Pt deposits reveal that the displacement deposition preferentially proceeds within the nanopores during electrodeposition. Sufficiently thick porous layer promotes the Si oxidation reaction due to its large oxidizable areas. This leads to fast displacement deposition that results in the unfavorable plugging at the pore opening. Pre-anodization of porous silicon suppresses the displacement deposition to some extent and enables the penetration of Pt complex anions without the obstruction by the plugging.