Study on Effect of Proton Irradiation Energy in AlGaN/GaN Metal-Oxide Semiconductor High Electron Mobility Transistors. (16th September 2015)

• Record Type: Journal Article
• Authors: Ahn, Shihyun; Dong, Chen; Zhu, Weidi; Kim, Byung-Jae; Hwang, Ya-Hsi; Ren, Fan; Pearton, Stephen J.; Yang, Gwangseok; Kim, Jihyun; Kravchenko, Ivan
• Is Part Of: ECS transactions. Volume 69:Number 14(2015)
• Page Start: 129
• Page End: 135
• Publication Date: 2015-09-16
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06914.0129ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The effects of proton irradiation energy on Al2 O3 /AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT) were studied. MOSHEMTs were irradiated at different irradiation energies of 5 MeV, 10 MeV, or 15 MeV with a fixed proton dose of 5 × 10 15 cm -2 . After the 5 MeV, 10 MeV and 15 MeV proton irradiation, MOSHEMTs' saturation current at gate voltage of 1V were reduced by 95.3, 68.3 and 59.8% and maximum transconductance were reduced by 88, 54.4, and 40.7% respectively. The carrier removal rate of the irradiation energy employed in this study was in the range of 127-289 cm -1, having lower energy with the highest removal rate.