Physical and Electrical Properties of Ag Contacts on MoS2. (11th September 2015)

• Record Type: Journal Article
• Authors: Yuan, Hui; Pan, Minghu; Cheng, Guangjun; Richter, Curt A.; Li, Qiliang
• Is Part Of: ECS transactions. Volume 69:Number 12(2015)
• Page Start: 3
• Page End: 15
• Publication Date: 2015-09-11
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06912.0003ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We first compared the electrical characteristics of MoS2 field-effect transistors with Ag source/drain contacts with those with Ti. MoS2 FETs with Ag contacts show more than 60 times higher on-state current than those with Ti contacts. Meanwhile, scanning electron microscopy, atomic force microscopy and Raman spectroscopy were carried out on 5nm Au / 5nm Ag or 5nm Au / 5nm Ti film deposited onto MoS2 mono- and few-layers. The results shows that Au/Ag forms smoother and denser film, and that Ag or Ti is in direct contact with MoS2 . It confirms that the metal-MoS2 interface is crucial to the device performance. Then, gate assisted contact-end Kelvin test structures and gate assisted 4-probe structures were used to measure the field effects of the transfer length and contact resistivity in source/drain contacts of top-gate MoS2 FETs. It indicates that the contact performance also contributes to the switching of the MoS2 transistors.