Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method. (21st September 2015)

• Record Type: Journal Article
• Authors: Guo, Jianqiu; Yang, Yu; Wu, Fangzhen; Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael
• Is Part Of: ECS transactions. Volume 69:Number 11(2015)
• Page Start: 33
• Page End: 38
• Publication Date: 2015-09-21
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06911.0033ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : A systematic method is developed and demonstrated here to determine the Burgers vectors of threading mixed dislocations in4H-SiC c-plane offcut wafers grown by PVT method. Both Synchrotron Monochromatic X-ray Topography and Ray Tracing Simulations are used in this method. Measurements confirm that in a commercial offcut wafer the majority of the threading dislocations with screw component are actually mixed type dislocations.