(Invited) Silver Sinter Joining and Stress Migration Bonding for WBG Die-Attach. (21st September 2015)

• Record Type: Journal Article
• Authors: Suganuma, Katsuaki; Nagao, Shijo; Sugahara, Toru; Yokoi, Emi; Zhang, Hao; Jiu, Jinting
• Is Part Of: ECS transactions. Volume 69:Number 11(2015)
• Page Start: 21
• Page End: 26
• Publication Date: 2015-09-21
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06911.0021ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Power electronics play an important role in the generation-storage-distribution conversion cycle of the electric energy. Wide band gap semiconductors such as SiC and GaN have attracted many researchers recently because both of their excellent energy conversion efficiency and of capability of device downsizing. The performance of interconnection, especially die-attach, has one of the essential roles for achieving high performance. Among various proposals for die-attach materials and processes, Ag sinter joining is a promising method for power semiconductors as well as for power LEDs, providing excellent heat-resistance to achieve stable joint structures be-yond 200 °C. This paper summarizes the present status of the Ag sinter joining and of the new approach with Ag film bonding, both of which have developed by the authors' group.