Cite
HARVARD Citation
Yang, Y. et al. (2015). Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers. ECS transactions. pp. 39-46. [Online].
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Yang, Y. et al. (2015). Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers. ECS transactions. pp. 39-46. [Online].