(Invited) High-Resolution Photoemission Study of High-k Dielectric Bilayer Stack on Ge(100). (14th September 2015)

• Record Type: Journal Article
• Authors: Miyazaki, Seiichi; Ohta, Akio
• Is Part Of: ECS transactions. Volume 69:Number 10(2015)
• Page Start: 165
• Page End: 170
• Publication Date: 2015-09-14
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06910.0165ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Precise determination of energy band alignment of high-k dielectric bilayer stack on Ge(100) has been demonstrated based on the analysis of the photoemission spectra. In the analysis of energy loss signals of O 1s photoelectrons, both elimination of overlapped signals such as Hf 4s and Ge-LMM Auger lines and discrimination of signals from each layer based on photoelectron take-off angle dependence are crucial for accurate determination of energy band gaps. The combination of the analyses of valence band spectra and of energy loss signals of primary core-line(s) taken at different photoelectron take-off angles enables us to determine the energy band offsets and band line-ups of multiple heterojunctions in a non-distractive way.