Biaxial Stress Evaluation in SiGe Epitaxially Grown on Ge Substrate by Oil-Immersion Raman Spectroscopy. (14th September 2015)

• Record Type: Journal Article
• Authors: Takeuchi, Kazuma; Kosemura, Daisuke; Yamamoto, Shotaro; Tomita, Motohiro; Usuda, Koji; Sawamoto, Naomi; Ogura, Atsushi
• Is Part Of: ECS transactions. Volume 69:Number 10(2015)
• Page Start: 81
• Page End: 87
• Publication Date: 2015-09-14
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06910.0081ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Anisotropic biaxial stress states in the high-Ge concentration Si1- x Ge x /Ge nanostructures were evaluated by oil-immersion Raman spectroscopy. Phonon deformation potentials (PDPs) are indispensable to convert the Raman frequency shift to stress in the Si1- x Ge x . Therefore, we investigated the accurate PDPs ( p and q ) of the Si1- x Ge x with the high Ge concentration by oil-immersion Raman spectroscopy. Using the derived PDPs, the clear uniaxial stress relaxation in the strained Si1- x Ge x nanostructure was observed.