Detection of HIV-1 RT Protein Using AlGaN/GaN High Electron Mobility Transistors. (10th April 2015)

• Record Type: Journal Article
• Authors: Chu, Chia-Ho; Hsu, Chen-Pin; Wang, Yu-Lin
• Is Part Of: ECS transactions. Volume 66:Number 7(2015)
• Page Start: 163
• Page End: 167
• Publication Date: 2015-04-10
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06607.0163ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : As AIDS caused by (human immunodeficiency virus type 1) has now spread to every country in the world. Statistics show that approximately 40 million people are currently living with HIV infection, and an estimated 35 million have died from this disease since the beginning of the epidemic 1 . In this study, we use DNA-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) for detecting low concentration of HIV-1 RT protein (1 fM) binding with duplex DNA (dsDNA) electronically, showing that the technique is promising for biosensor applications.