(Invited) The Stability of High Voltage AlGaN/GaN HEMTs. (10th April 2015)

• Record Type: Journal Article
• Authors: Huang, Chih-Fang; Chang, Ting-Fu; Wang, Yun-Hsiang; Liang, Yung C.
• Is Part Of: ECS transactions. Volume 66:Number 7(2015)
• Page Start: 127
• Page End: 137
• Publication Date: 2015-04-10
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06607.0127ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : In this study we investigated the effects of gate stress and body stress on the stability of high voltage AlGaN/GaN HEMTs, emphasizing on the variation of threshold voltage under different stress conditions. Devices with a Schottky gate, a recess MIS gate, and a p-GaN gate design were tested. Gate stresses were imposed with different pulse conditions. Body stresses were performed with a constant voltage or a constant current applied at the body electrode. The experiment results show that Schottky gate devices have a smaller threshold voltage variation and hence are more robust under all these stress conditions.