Prediction of Photovoltaic Cu(In, Ga)Se2 p-n Device Performance by forward Bias Electrochemical Analysis of Only the p-Type Cu(In, Ga)Se2 Films. (13th April 2015)

• Record Type: Journal Article
• Authors: Colombara, Diego; Bertram, Tobias; Depredurand, Valérie; Fouquet, Thierry; Bour, Jérôme; Broussillou, Cédric; Grand, Pierre-Philippe; Dale, Phillip J.
• Is Part Of: ECS transactions. Volume 66:Number 6(2015)
• Page Start: 19
• Page End: 25
• Publication Date: 2015-04-13
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06606.0019ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This work is an attempt to rate the quality of Mo/Cu(In, Ga)Se2 films intended for fabrication of photovoltaic devices. The procedure is based on the simple current-voltage electrochemical analysis of the bilayer in a Eu 2+/3+ -containing electrolyte solution. Two series of bilayer samples were tested electrochemically, while sister samples were completed into Mo/Cu(In, Ga)Se2 /CdS/i-ZnO/Al:ZnO/Ni-Al solid state devices and their current-voltage characteristics measured in the dark. A correlation was found between the reverse saturation current density of the solid state devices and an analogous parameter extracted from the electrochemical response in forward bias. While Eu 2+ was found to be metastable in water posing restrictions to the application, reproducible measurements were achieved with a methanol-based solution. The intrinsic simplicity of the proposed methodology makes it particularly suitable for the implementation of a low-cost diagnostic tool.