ZnO Electrodeposition on Boron-Doped Diamond: Effects of Zinc Precursor Concentration. (13th April 2015)

• Record Type: Journal Article
• Authors: Gautier, Pierrick; Vallée, Anne; Etcheberry, Arnaud; Simon, Nathalie
• Is Part Of: ECS transactions. Volume 66:Number 6(2015)
• Page Start: 141
• Page End: 149
• Publication Date: 2015-04-13
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06606.0141ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The cathodic electrodeposition of zinc oxide has been widely studied on various substrates in the last decades. The boron doped diamond (BDD) is a non conventional wide band gap semiconductor, which offers new possibilities as a substrate for this electrochemical deposition. Thus, in the present work, we study the deposition process performed with zinc chloride and dissolved oxygen as a precursor. The effect of zinc precursor concentration in a range of 0.2 to 5 mM is tested at 60°C. The current transient curves coupled with X-Ray Diffraction and Scanning Electron Microscopy analysis, reveal the effect of this parameter on the morphology of obtained ZnO/BDD deposits. Interestingly, the formation of ZnO pyramids was highlighted for the first time.