The Comprehension of the Interfacial Chemistry during Etching Process onto SC: A Way to Understand the Mechanism. (13th April 2015)

• Record Type: Journal Article
• Authors: Vayron, Tommy; Causier, A; Bouttemy, Muriel; Gérard, Isabelle; Aureau, Damien; Vigneron, Jacky; Etcheberry, Arnaud
• Is Part Of: ECS transactions. Volume 66:Number 6(2015)
• Page Start: 3
• Page End: 8
• Publication Date: 2015-04-13
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06606.0003ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Etching and electrochemical behaviors of n & p InP are studied in acidic bromine solutions. We observe very similar behaviors as the ones observed for GaAs. Surface analysis performed by XPS detects that very complex oxidation processes are generated at the interface during the etching process. The presence of these oxide phase points out that we have to consider the classical chemical attack proposed in the literature but also electroless contribution which is intimately associated to the global process.