Electroless Ni Layer: Influence of Growth Steps and Annealing Temperature on NiSi Formation. (13th April 2015)

• Record Type: Journal Article
• Authors: Delbos, Elise; El Belghiti, Hanane; Aureau, Damien; Vigneron, Jackie; Bouttemy, Muriel; Etcheberry, Arnaud
• Is Part Of: ECS transactions. Volume 66:Number 6(2015)
• Page Start: 49
• Page End: 55
• Publication Date: 2015-04-13
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06606.0049ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : For the improvement of the silicon solar cell and competitiveness, one of the today challenges is to process Ni/Cu contact lines by chemical way. The study presented in this article is focused on the annealing of electroless nickel-phosphorous layers to create the NiSi film necessary for the good adhesion of the Ni/Cu stack and to guaranty the low contact resistance of these lines. The impact of the initial Ni-P layer thickness and the annealing temperature were particularly taken into account. Thanks to a combination of characterization techniques (SEM, EDS and XPS), the thickness and the composition of the NiSi layer were well established and monitored enabling to optimize the contact line procedure.