Compact Model for Nano-Wire Tunnel Field-Effect Transistor. (27th March 2015)

• Record Type: Journal Article
• Authors: Sato, Shingo; Omura, Yasuhisa; Mallik, Abhijit
• Is Part Of: ECS transactions. Volume 66:Number 5(2015)
• Page Start: 171
• Page End: 177
• Publication Date: 2015-03-27
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06605.0171ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This paper presents a compact model of the Nano-Wire Tunnel Field-Effect Transistor (NW-TFET). We analyze the validity of the previous-reported transmission probability and our model using an analytical potential model with a depletion approximation. We clarify the difference between the models by using the ratio of channel length to natural length to characterize the NW-TFET. By considering the offset of the gate voltage, the tunnel probability of our model can reproduce the numerically derived one for any channel length near the on-state. Finally, we present a compact model of the drain current.