High Mobility Materials on Insulator for Advanced Technology Nodes. (31st March 2015)

• Record Type: Journal Article
• Authors: Schwarzenbach, Walter; Figuet, Christophe; Delprat, Daniel; Veytizou, Christelle; Huyet, Isabelle; Tempesta, Catherine; Ecarnot, Ludovic; Widiez, Julie; Loup, Virginie; Hartmann, Jean-Michel; Besson, Pascal; Deguet, Chrystel; Mazen, Frédéric; Nguyen, Bich-Yen; Maleville, Christophe
• Is Part Of: ECS transactions. Volume 66:Number 4(2015)
• Page Start: 31
• Page End: 37
• Publication Date: 2015-03-31
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06604.0031ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : sSOI & SiGeOI substrates have already demonstrated their potential to support digital advanced technology performance roadmap, and are consequently considered in Soitec product roadmap for 10nm technology nodes and beyond. Smart-Cut® process has already demonstrated its benefit to transfer high quality strain silicon and/or SiGe layer from a donor. This paper will show for the first time the results achieved on a 300mm SiGeOI material with high germanium content. Beyond current crystal quality & active layer uniformity, next development will focus on dislocation and surface defect densities improvement.