Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques. (31st March 2015)

• Record Type: Journal Article
• Authors: Morin, Pierre Francois; Grenouillet, Laurent; Loubet, Nicolas; Pofelski, Alexandre; Lu, Darsen; Liu, Qing; Augendre, Emmanuel; Maitrejean, Sylvain; Fiori, Vincent; de Salvo, Barbara; Doris, Bruce; Kleemeier, Walter
• Is Part Of: ECS transactions. Volume 66:Number 4(2015)
• Page Start: 57
• Page End: 65
• Publication Date: 2015-03-31
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06604.0057ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Germanium enrichment process also known as condensation can be used for the integration of stressors in the fully depleted silicon on insulator technology. Using multi-physics modeling combined with advanced TEM characterization we studied the formation of stressors with condensation. We first observed in blanket 1D structures that the diffusion rate is substantially reduced during Ge condensation compared to the typical diffusion in neutral atmosphere. We postulate this is due to the injection of interstitial at the oxide/SiGe interface and to a reduced stress effect on the kinetics. We then studied self-aligned in plane stressors (SAIPS) formed in the source/drain region using localized Ge condensation. It is shown that the SAIPS methodology almost doubles the channel stress generated by the source drain stressor. Combining Si0.65 Ge0.35 and SAIPS source/drain stressors with in-situ Si0.79 Ge0.21 strained channel allows achieving a stress of -2 GPa in the p-type channel with gate first architecture.