(Invited) High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200mm Si Substrates. (13th April 2015)

• Record Type: Journal Article
• Authors: Lo, C.-F.; Laboutin, O.; Kao, C.-K.; O'Connor, K.; Hill, D.; Johnson, W.
• Is Part Of: ECS transactions. Volume 66:Number 1(2015)
• Page Start: 191
• Page End: 199
• Publication Date: 2015-04-13
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06601.0191ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Crack-free AlGaN/GaN heterostructure field-effect transistors on a 200 mm silicon substrate were demonstrated to enable large-volume, low-cost manufacturing technology for GaN power electronics. Low normalized buffer leakage of around 3 × 10 -9 A/mm and low normalized three-terminal subthreshold leakage of around 2 × 10 -7 A/mm were obtained using highly carbon-doped buffer epilayers. A high three-terminal off-state breakdown voltage of 1.35 kV and a low specific on-resistance of 1.3 mohm-cm 2 were achieved on the 4.5-µm-thick device with a 10 µm gate-to-drain spacing. The figure of merit of our device is calculated as 1.4×10 9 V 2 ohm -1 cm -2