Precursor Concentration and Substrate Effects on High Rate Dip-Coated Vanadium Oxide Thin Films. (10th February 2015)

• Record Type: Journal Article
• Authors: Glynn, Colm; Aureau, Damien; O'Hanlon, Sally; Daly, Luke; Geaney, Hugh; Collins, Gillian; Etcheberry, Arnaud; O'Dwyer, Colm
• Is Part Of: ECS transactions. Volume 64:Number 42(2014)
• Page Start: 1
• Page End: 9
• Publication Date: 2015-02-10
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06442.0001ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Uniform thin films of vanadium pentoxide were dip-coated from a high-concentration vanadium oxytriisopropoxide precursor which is shown to be resistant to the dewetting processes which can form surface pinhole defects. Through appropriate withdrawal speed choice, the thin films have a smooth uniform surface morphology with a low rms roughness of <1 nm in both their amorphous and crystallized states. The structure of the thin films follows that of bulk vanadium pentoxide but in a nanostructured form. The deposition methods shown can be applied to prepare thin films upon a variety of different substrates and other alkoxide based metal oxide materials.