Dual-gated mono–bilayer graphene junctions. Issue 2 (28th October 2020)

• Record Type: Journal Article
• Authors: Du, Mingde; Du, Luojun; Wei, Nan; Liu, Wei; Bai, Xueyin; Sun, Zhipei
• Is Part Of: Nanoscale advances. Volume 3:Issue 2(2021)
• Page Start: 399
• Page End: 406
• Publication Date: 2020-10-28
• Subjects: 620.5
• DOI: 10.1039/d0na00547a
• Languages: English
• ISSNs: 2516-0230

Abstract

Abstract : Dual-gated mono–bilayer graphene junctions are built, and gate tunable asymmetric transport properties are observed. Abstract : A lateral junction with an atomically sharp interface is extensively studied in fundamental research and plays a key role in the development of electronics, photonics and optoelectronics. Here, we demonstrate an electrically tunable lateral junction at atomically sharp interfaces between dual-gated mono- and bilayer graphene. The transport properties of the mono–bilayer graphene interface are systematically investigated with I ds – V ds curves and transfer curves, which are measured with bias voltage V ds applied in opposite directions across the asymmetric mono–bilayer interface. Nearly 30% difference between the output I ds – V ds curves of graphene channels measured at opposite V ds directions is observed. Furthermore, the measured transfer curves confirm that the conductance difference of graphene channels greatly depends on the doping level, which is determined by dual-gating. The V ds direction dependent conductance difference indicates the existence of a gate tunable junction in the mono–bilayer graphene channel, due to different band structures of monolayer graphene with zero bandgap and bilayer graphene with a bandgap opened by dual-gating. Simulation of the I ds – V ds curves based on a new numerical model validates the gate tunable junction at the mono–bilayer graphene interface from another point of view. The dual-gated mono–bilayer graphene junction and new protocol for I ds – V ds curve simulation pave a possible way for functional applications of graphene in next-generation electronics.