Schottky barrier lowering due to interface states in 2D heterophase devices. Issue 2 (20th December 2020)

• Record Type: Journal Article
• Authors: Jelver, Line; Stradi, Daniele; Stokbro, Kurt; Jacobsen, Karsten Wedel
• Is Part Of: Nanoscale advances. Volume 3:Issue 2(2021)
• Page Start: 567
• Page End: 574
• Publication Date: 2020-12-20
• Subjects: 620.5
• DOI: 10.1039/d0na00795a
• Languages: English
• ISSNs: 2516-0230

Abstract

Abstract : Interface states of metallic origin enhance the tunneling and significantly reduce the effective Schottky barrier height of phase-engineered MoTe2 junctions. Abstract : The Schottky barrier of a metal–semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic configuration in the interface, and impurity doping. We show that also the presence of interface states at 2D metal–semiconductor junctions can give rise to a large renormalization of the effective Schottky barrier determined from the temperature dependence of the current. We investigate the charge transport in n- and p-doped monolayer MoTe2 1T′–1H junctions using ab initio quantum transport calculations. The Schottky barriers are extracted both from the projected density of states and the transmission spectrum, and by simulating the IT-characteristic and applying the thermionic emission model. We find interface states originating from the metallic 1T′ phase rather than the semiconducting 1H phase in contrast to the phenomenon of Fermi level pinning. Furthermore, we find that these interface states mediate large tunneling currents which dominates the charge transport and can lower the effective barrier to a value of only 55 meV.