Cite
HARVARD Citation
Pinchbeck, J. et al. (2021). Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects. Journal of physics. p. . [Online].
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Pinchbeck, J. et al. (2021). Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects. Journal of physics. p. . [Online].