Magnetotransport in hybrid InSe/monolayer graphene on SiC. (25th January 2021)

• Record Type: Journal Article
• Authors: Wang, Chih-Yuan; Lin, Yun-Wu; Chuang, Chiashain; Yang, Cheng-Hsueh; Patel, Dinesh K; Chen, Sheng-Zong; Yeh, Ching-Chen; Chen, Wei-Chen; Lin, Chia-Chun; Chen, Yi-Hsun; Wang, Wei-Hua; Sankar, Raman; Chou, Fang-Cheng; Kruskopf, Mattias; Elmquist, Randolph E; Liang, Chi-Te
• Is Part Of: Nanotechnology. Volume 32:Number 15(2021)
• Publication Date: 2021-01-25
• Subjects: graphene -- InSe -- interactions -- Hall effect; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/abd726
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron–electron (e–e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (ln T ) dependence of the Hall slope R H = δR xy / δB = δρ xy / δB can be used to probe e–e interaction effects at various temperatures even when the measured resistivity does not show a ln T dependence due to strong electron–phonon scattering. Nevertheless, one needs to be certain that the change of R H is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC.