Correction: Broadband photoelectric tunable quantum dot based resistive random access memory. Issue 2 (6th January 2021)
- Record Type:
- Journal Article
- Title:
- Correction: Broadband photoelectric tunable quantum dot based resistive random access memory. Issue 2 (6th January 2021)
- Main Title:
- Correction: Broadband photoelectric tunable quantum dot based resistive random access memory
- Authors:
- Chen, Zhiliang
Yu, Yu
Jin, Lufan
Li, Yifan
Li, Qingyan
Li, Tengteng
Li, Jie
Zhao, Hongliang
Zhang, Yating
Dai, Haitao
Yao, Jianquan - Abstract:
- Abstract : Correction for 'Broadband photoelectric tunable quantum dot based resistive random access memory' by Zhiliang Chen et al., J. Mater. Chem. C, 2020, 8, 2178–2185, DOI: ; 10.1039/C9TC06230K .
- Is Part Of:
- Journal of materials chemistry. Volume 9:Issue 2(2021)
- Journal:
- Journal of materials chemistry
- Issue:
- Volume 9:Issue 2(2021)
- Issue Display:
- Volume 9, Issue 2 (2021)
- Year:
- 2021
- Volume:
- 9
- Issue:
- 2
- Issue Sort Value:
- 2021-0009-0002-0000
- Page Start:
- 737
- Page End:
- 737
- Publication Date:
- 2021-01-06
- Subjects:
- Materials -- Periodicals
Chemistry, Analytic -- Periodicals
Optical materials -- Research -- Periodicals
Electronics -- Materials -- Research -- Periodicals
543.0284 - Journal URLs:
- http://pubs.rsc.org/en/journals/journalissues/tc# ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/d0tc90273j ↗
- Languages:
- English
- ISSNs:
- 2050-7526
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5012.205300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 15631.xml