A general route towards two-dimensional organic crystal-based functional fibriform transistors for wearable electronic textiles. Issue 2 (11th January 2021)

• Record Type: Journal Article
• Authors: Zheng, Lei; Wang, Cong; Tian, Xinzi; Zhang, Xiaotao; Dong, Huanli; Hu, Wenping
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 2(2021)
• Page Start: 472
• Page End: 480
• Publication Date: 2021-01-11
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d0tc05390b
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : High-performance fibriform OFET-based functional devices based on two-dimensional crystals of organic semiconductors are demonstrated through a novel jigsaw puzzle strategy. Abstract : Fibriform organic field-effect transistors (OFETs) play a key role in wearable electronic devices due to their unique advantages in optoelectronic and sensing applications. However, most reported devices suffer from poor performance and limited functionality that greatly limit them from being more fully integrated into our daily life. Two-dimensional crystals of organic semiconductors (2DCOS) are promising functional materials attributed to their long-range order, ideal band gaps and few-layered ultrathin structures, which seem to overcome this challenge and open new door for this field. Herein, the first fibriform OFETs and OFET-based functional devices based on ultrathin 2DCOS are demonstrated through a jigsaw puzzle physical chemical method. This method provides a facile way to broaden the practical applications of 2DCOS and construct high-performance electronic components on fibers. Impressively, the results show competitive optoelectronic characteristics, e.g., a high field-effect electron mobility of 1 cm 2 V −1 s −1, well-balanced ambipolar characteristic of p–n junction, high voltage gain of inverter up to 12.4 and superior near-infrared (NIR) photo response performance with a photo-responsivity ( R ) of 1.06 × 10 4 A W −1 and detectivity of more than 10 13 Jones, indicating a great potential of the devices in electronic textile (e-textile) applications.