Preparation and characterization of ion beam sputtered graphitic carbon nitride thin film. (2021)

• Record Type: Journal Article
• Authors: Sharath, R.A.; Fang, F.; Trompetter, W.J.; Futter, J.; Kennedy, J.
• Is Part Of: Materials today. Volume 36:Part 2(2021)
• Page Start: 488
• Page End: 491
• Publication Date: 2021
• Subjects: Graphitic carbon nitride -- Ion beam sputtering -- Thin film -- Post-annealing -- Ion Beam Analysis; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2020.05.147
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: Ion beam sputtering is a versatile technique to create nanostructured thin films with precise control over process parameters. We report the properties of graphitic carbon nitride (g-C3 N4 ) thin films deposited by ion beam sputtering. Ion beam analysis methods including Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) and Particle Induced X-ray Emission (PIXE) were used for quantitative determination of composition, thickness, elemental depth profile and trace, major elements and impurities. It was found that by directly using compressed g-C3 N4 powders as the sputter target material and tuning the process parameters, g-C3 N4 thin films with well controlled deposition rate were obtained. Post-annealing above 250 °C under argon atmosphere for 30 min was needed to recrystallize the g-C3 N4 nanostructure. Our results suggest that ion beam sputtering technique is a promising method to obtain uniform and high-quality g-C3 N4 thin films.