Communication—Improving Optoelectronic Properties of Electrochemically Deposited Cuprous Oxide Thin-Films by Low-Temperature Post-Deposition Annealing. Issue 12 (20th September 2017)

• Record Type: Journal Article
• Authors: Takiguchi, Yuki; Orisaka, Aoi; Miyajima, Shinsuke
• Is Part Of: Journal of the Electrochemical Society. Volume 164:Issue 12(2017)
• Page Start: D802
• Page End: D804
• Publication Date: 2017-09-20
• Subjects: cuprous oxide -- solar cells; Electrochemistry -- Periodicals; 541.3705
• DOI: 10.1149/2.0081713jes
• Languages: English
• ISSNs: 0013-4651

Abstract

Abstract : The effect of low-temperature post-deposition annealing (PDA) on electrochemically deposited cuprous oxide (ECD-Cu2 O) thin-films was investigated. The PDA at 150°C drastically improved optoelectronic properties of ECD-Cu2 O films regardless of annealing atmosphere. The films exhibits free exciton luminescence at room temperature and a high hole mobility about 18 cm 2 /V·s. Moreover, the diffusion length of photo-generated carriers increased around two times compared to the as-deposited film. On the other hands, the PDA at 200°C significantly deteriorated the optoelectronic properties presumably due to the increase of mid-gap defects in the Cu2 O films.