Simulation study on lateral minority carrier transport in the surface inversion layer of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell. (4th February 2021)

• Record Type: Journal Article
• Authors: Kamioka, Takefumi; Hayashi, Yutaka; Gotoh, Kazuhiro; Hara, Tomohiko; Ozaki, Ryo; Morimura, Motoo; Shimizu, Ayako; Nakamura, Kyotaro; Usami, Noritaka; Ogura, Atsushi; Ohshita, Yoshio
• Is Part Of: Japanese journal of applied physics. Volume 60:Number 2(2021)
• Publication Date: 2021-02-04
• Subjects: solar cell -- silicon heterojunction -- amorphous silicon -- inversion layer -- interface defects/traps -- crystalline silicon -- device simulation; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abdd02
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The theoretical lateral current of the surface inversion layer in a crystalline silicon (cSi) surface for a p-aSi:H/i-aSi:H/cSi heterojunction (SHJ) solar cell was calculated using computer simulation and was compared with the experimental one to study defects/traps at the aSi:H/cSi interface and/or in the cSi surface and to detect the acceptor concentration ( N a ) in p-aSi:H. To experimentally extract the lateral surface inversion layer current, a field-effect transistor type test element group device was co-integrated with SHJ cells on the same wafer. From the correlation between the experimental and calculated lateral surface inversion layer current, the density of defects/traps ( D it ) at the aSi:H/cSi interface and/or in the cSi surface and the value of N a were extracted. The calculated lateral surface inversion layer current stayed unchanged for various minority carrier lifetimes in the substrate, suggesting that this method is not suffered from the variation in the material parameters in the substrate.