Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures. (February 2021)

• Record Type: Journal Article
• Authors: Gavrina, P S; Podoskin, A A; Fomin, E V; Veselov, D A; Shamakhov, V V; Slipchenko, S O; Pikhtin, N A; Kop'ev, P S
• Is Part Of: Quantum electronics. Volume 51:Number 2(2021)
• Page Start: 129
• Page End: 132
• Publication Date: 2021-02
• Subjects: semiconductor lasers -- heterostructure -- pulsed pumping -- lasing spectrum.; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL17478
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: Pulsed radiative characteristics of high-power semiconductor lasers based on an asymmetric InGaAs/AlGaAs/GaAs heterostructure with an active region including two quantum wells and a gradient waveguide on the side of the p-emitter are studied. It is shown that the use of the proposed design allows efficient laser operation under pumping by 100-ns current pulses in the temperature range 25 – 90 °C. The lasers with a Fabry–Perot cavity 2900 μm long demonstrated peak powers of 62 W (injection current 123 A) and 43 W (122 A) at temperatures of 25 and 90 °C, respectively. It is found that at room temperature and currents of ≈50A, a decrease in the cavity length to 600 μm does not cause a decrease in the output power with respect to the power of lasers with a long (2900 μm) cavity. An increase in temperature to 90 °C at high injection currents leads to a sharp decrease in the radiative efficiency of lasers with a short (600 μm) cavity and to the change of their operation regime to the two-band lasing.