Cite
HARVARD Citation
Haris, M. et al. (2021). Pseudo Split Gate In0.53Ga0.47As/InP Hetero‐Junction Tunnel FET: Design and Analysis. International journal of numerical modelling. p. n/a. [Online].
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Haris, M. et al. (2021). Pseudo Split Gate In0.53Ga0.47As/InP Hetero‐Junction Tunnel FET: Design and Analysis. International journal of numerical modelling. p. n/a. [Online].