Dynamic oxidation of SiC with arc-heated plasma wind tunnel and laser heating. (March 2021)

• Record Type: Journal Article
• Authors: Momozawa, Ai; Yokote, Norihiro; Terutsuki, Daigo; Komurasaki, Kimiya
• Is Part Of: Vacuum. Volume 185(2021)
• Publication Date: 2021-03
• Subjects: Arc-heated plasma wind tunnel -- Laser heating -- Re-entry -- Thermal protection system -- Dynamic oxidation -- Static oxidation; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2020.109899
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: For the investigation of thermal protection system (TPS) for re-entry vehicles, arc-heated plasma wind tunnel was developed to simulate re-entry conditions. The surface temperatures of the samples were independently controlled of the plasma flow by installing a laser heating system. By using this system, first attempt of the dynamic oxidation of SiC was conducted. SiC sample surface was heated up to 2200 K and was exposed to high-speed atomic oxygen (O) flow during oxidation for 100–600 s. From the obtained results, active/passive transition border of SiC was suggested: 1700–1800 K at 100–1000 Pa area of oxygen partial pressure. Obtained A/P transition border is considered close to the actual re-entry condition wherein the oxidation occurs in the condition of highly dissociated and slightly ionized oxygen gas flow simulating the re-entry conditions. Highlights: Arc-heated plasma wind tunnel was developed to simulate re-entry conditions. Surface temperature of samples are independently controlled with laser heating system. First attempt of dynamic oxidation of SiC with the newly developed system was conducted. Active/passive transition border of SiC was suggested.