57‐2: Scalable Crystallization of a‐Si Film on a Glass Substrate by Using a Blue Laser. Issue 1 (30th May 2018)

• Record Type: Journal Article
• Authors: Park, Minok; Hong, Seungpyo; Jung, Y.H.; Lee, Suhui; Rho, Yoonsoo; Park, H. K.; Grigoropoulos, Costas P.; Jang, Jin
• Is Part Of: Digest of technical papers. Volume 49:Issue 1(2018)
• Page Start: 751
• Page End: 754
• Publication Date: 2018-05-30
• Subjects: Low Temperature Polycrystalline Silicon(LTPS) -- Blue diode laser -- Silicon thin film -- Lateral grain growth; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.12345
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : A continuous‐wave blue laser annealing (BLA) system (λ ~ 440 nm) is applied to delineate the physical phenomenon of low‐temperature crystallization from amorphous Si (a‐Si) thin film to poly‐Si film on glass substrates for potential industrial application. At various scanning speeds and laser intensities, crystallization mechanism of BLA has been studied. It shows that BLA can achieve high quality, smooth poly‐Si film with laterally grown grains with sizes of 4×10 µm, as studied by optical microscopy, Raman spectroscopy, and AFM. The p‐channel poly‐Si TFT on glass exhibited the field‐effect mobility of 120.82 cm 2 /Vs and subthreshold swing of 284mV/dec. Therefore, it proves that BLA can substitute conventional annealing processes as a reliable, scalable, and economical tool.