Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaOx in Pt/Ta2O5/Ti Device Stacks. Issue 2 (19th January 2021)

• Record Type: Journal Article
• Authors: Jin, Soeun; Lee, Donguk; Kwak, Myonghoon; Kim, Ah Ra; Hwang, Hyunsang; Cheon, Hyuknyeong; Kwon, Jung-Dae; Kim, Yonghun
• Is Part Of: Physica status solidi. Volume 218:Issue 2(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-01-19
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202170012
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Neuromorphic Synaptic Devices In article number 2000534, Jung‐Dae Kwon, Yonghun Kim, and co‐workers report a reliable Ta2 O5 ‐based resistive synaptic device inserted with sub‐TaOx nanoclusters, enabling that the concentration of nanoclusters is precisely controlled using plasma enhanced atomic layer deposition (PE‐ALD). As a result, the MNIST pattern recognition accuracy improves by 11.45%, which can demonstrate highly reliable analog synaptic devices for neuromorphic hardware systems.