Overcoming the Anisotropic Growth Limitations of Free‐Standing Single‐Crystal Halide Perovskite Films. (1st December 2020)

• Record Type: Journal Article
• Authors: Chen, Yuan; Zeng, Haibo; Ma, Peipei; Chen, Gaoyuan; Jian, Jie; Sun, Xing; Li, Xiaoming; Wang, Haiyan; Yin, Wanjian; Jia, Quanxi; Zou, Guifu
• Is Part Of: Angewandte Chemie. Volume 133:Number 5(2021)
• Page Start: 2661
• Page End: 2668
• Publication Date: 2020-12-01
• Subjects: CsPbBr3 -- freestanding anisotropic growth -- halide perovskite -- single crystal film; Chemistry -- Periodicals; 540
• DOI: 10.1002/ange.202011853
• Languages: English
• ISSNs: 0044-8249

Abstract

Abstract: It is extremely challenging to grow single‐crystal halide perovskite films (SCHPFs) with not only desired transport properties but also large lateral size with much thinner thickness. Here, we report the growth of freestanding single crystal CsPbBr3 SCHPFs with thickness less than 100 nm and a lateral size close to centimeter for the first time. A new model for growth kinetics (Ψ=Aexp[−(EA −Es )/(kB T)]) is proposed to address the surface energy and temperature effect on the growth rate of ultrathin CsPbBr3 single‐crystal film. The experimental results and DFT calculations both demonstrated that the surfactant plays a critical role in modifying the surface energy and achieving anisotropic growth. This work opens new opportunities for high‐quality SCHPFs with large lateral size and controllable thickness that may find wide applications for optoelectronic devices. Abstract : It is challenging to grow single‐crystal halide perovskite films with large lateral size and much thinner thickness. A surface energy modifying strategy was proposed that achieves anisotropic growth, freestanding single‐crystal CsPbBr3 halide perovskite films with a thickness less than 100 nm and a lateral size close to one centimeter.