Hydrogen in As‐Grown and Annealed ZnO Films Grown by Atomic Layer Deposition. Issue 1 (4th November 2020)

• Record Type: Journal Article
• Authors: Guziewicz, Elzbieta; Wozniak, Wojciech; Mishra, Sushma; Jakiela, Rafal; Guziewicz, Marek; Ivanov, Vitalij Yu; Lusakowska, Elzbieta; Schifano, Ramon
• Other Names: Kuznetsov Andrej guestEditor.; Dangtip Somsak guestEditor.; Intarasiri Saweat guestEditor.
• Is Part Of: Physica status solidi. Volume 218:Issue 1(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-11-04
• Subjects: atomic layer deposition -- hydrogen -- zinc oxide films; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202000318
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : The origin of unintentional hydrogen incorporation in ZnO films grown by thermal atomic layer deposition is investigated by comparing layers deposited using H2 O and D2 O as oxygen precursors. Secondary ion mass spectroscopy measurements of as‐grown and 800 °C annealed layers provide evidence that the hydrogen contribution originating from the oxygen precursor is weakly chemically bound and is mostly removed by rapid thermal annealing conducted at 800 °C for 3 min in oxygen atmosphere. On the other hand, the remaining hydrogen introduced by ethyl groups originating from the metalorganic zinc precursor withstands such treatment. Abstract : The thermal stability of hydrogen in ZnO films grown by atomic layer deposition is investigated by comparing layers deposited using water and heavy water as oxygen precursors. It is shown that hydrogen originating from oxygen precursor is mostly removed by annealing at 800 °C in oxygen, whereas the hydrogen content introduced by ethyl groups originating from diethylzinc withstands such treatment.