Communication—Defect-Free Filling of High Aspect Ratio Through Vias in Ultrathin Glass. Issue 1 (27th November 2018)

• Record Type: Journal Article
• Authors: Chang, Yiu-Hsiang; Tseng, Pei-Lien; Lin, Jen-Chieh; Chen, Jie-Chi; Huang, Meng-Chi; Lin, Hung-Yi; Pollard, Scott; Mazumder, Prantik
• Is Part Of: Journal of the Electrochemical Society. Volume 166:Issue 1(2019)
• Page Start: D3155
• Page End: D3157
• Publication Date: 2018-11-27
• Subjects: Electrodeposition - Copper -- Electrodeposition - electroless -- copper -- electroplating -- through glass via; Electrochemistry -- Periodicals; 541.3705
• DOI: 10.1149/2.0181901jes
• Languages: English
• ISSNs: 0013-4651

Abstract

Abstract : We report an all-solution, simple process (DC plating with single additive) for metallizing high aspect ratio (AR = 5 and AR∼12) through vias in ultrathin glass (thickness ∼100 um). Highly uniform and continuous Cu seed layer is first achieved by a simple surface modification, Sn/Pd catalyst adsorption and Cu electroless plating. Subsequently, the vias are filled by DC plating in the presence of a single additive nitrotetrazolium blue chloride (NBT). The strong inhibition effect of NBT is exploited to first bridge the center of the vias followed by filling of two blind vias.