Communication—Electrodeposition of Nano-Twinned Cu in Void-Free Filling for Blind Microvia of High Density Interconnect. Issue 1 (9th November 2018)

• Record Type: Journal Article
• Authors: Zhu, Qingsheng; Zhang, Xian; Li, Sujie; Liu, Chunzhong; Li, Cai-Fu
• Is Part Of: Journal of the Electrochemical Society. Volume 166:Issue 1(2019)
• Page Start: D3097
• Page End: D3099
• Publication Date: 2018-11-09
• Subjects: Electrodeposition -- Electrodeposition - Copper -- Cu electrodeposition -- High density interconnect -- nanotwin; Electrochemistry -- Periodicals; 541.3705
• DOI: 10.1149/2.0131901jes
• Languages: English
• ISSNs: 0013-4651

Abstract

Abstract : Large-scale Cu nanotwins were electrodeposited in void-free filling within blind microvia using single gelatin as additive in electrolyte. The void-free filling effect was might be caused by a gradient suppressing effect of gelatin along the microvia depth. The gradient distribution of gelatin was resulted from the strong dependence of adsorption on convection force. The adsorbed gelatin might greatly increase the surface tension on the depositing atom plane and then dragged a layer of adatom to a misarranged sites in the lattice, leading to the twinning nucleation.