Cite
HARVARD Citation
Lai, Y. et al. (n.d.). Effects of low-temperature Si buffer thickness and SiGe oxidation on sensitivity of Si1−xGex nanowire. Japanese journal of applied physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Lai, Y. et al. (n.d.). Effects of low-temperature Si buffer thickness and SiGe oxidation on sensitivity of Si1−xGex nanowire. Japanese journal of applied physics. p. . [Online].