POSS enhanced 3D graphene - Polyimide film for atomic oxygen endurance in Low Earth Orbit space environment. (16th March 2020)

• Record Type: Journal Article
• Authors: Shivakumar, Ranjana; Bolker, Asaf; Tsang, Siu Hon; Atar, Nurit; Verker, Ronen; Gouzman, Irina; Hala, Mor; Moshe, Nehora; Jones, Alexandra; Grossman, Eitan; Minton, Timothy K.; Tong Teo, Edwin Hang
• Is Part Of: Polymer. Volume 191(2020)
• Publication Date: 2020-03-16
• Subjects: 3D-C foams -- POSS -- Polyimide -- Nanocomposites -- Atomic oxygen -- Low Earth Orbit; Polymers -- Periodicals; Polymerization -- Periodicals; Polymères -- Périodiques; Polymérisation -- Périodiques; 547.7
• DOI: 10.1016/j.polymer.2020.122270
• Languages: English
• ISSNs: 0032-3861

Abstract

Abstract: Recently, 3D-graphene infused polyimide (3DC/PI) films have shown to be an effective protection coating for electrostatic discharge in spacecraft. However, these films are not suitable for Low Earth Orbit (LEO) due to atomic oxygen (AO) erosion. Here, we used Polyhedral Oligomeric Silsesquioxane (POSS) to enhance the AO durability of 3D-C/PI films. Three different ways of adding POSS to the composite films were studied with ground-based AO exposure. For all infusion approaches, their electrical conductivity behaviour is well preserved and the presence of POSS results in reduced AO erosion yield. Of all the methods studied here, incorporating POSS directly into PI results in the lowest erosion yield of 4.67 × 10 −25 cm 3 /O-atom (one order of magnitude lower than that of Kapton). Adding POSS to PI, extends the durability of the composite film beyond 10 years, making it an ideal protective material for long term mission in LEO. Graphical abstract: Image 1 Highlights: Comparison of AO erosion of 3D-C/PI films with POSS in 3D-C or PI or both. POSS added to 3D-C alone has no effect on composite atomic oxygen erosion yield. Adding POSS to PI, extends the lifetime of 3D-C/PI film beyond 10 years in LEO. 5 wt% of POSS added to PI increases the Youngs's modulus of 3D-C/PI. 3D-C/PI with 15 wt% of POSS has lower modulus than 3D-C/PI with 5 wt% POSS.