Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth. (22nd April 2019)

• Record Type: Journal Article
• Authors: Sueoka, Koji; Mukaiyama, Yuji; Maeda, Susumu; Iizuka, Masaya; Mamedov, Vasif M.
• Is Part Of: ECS journal of solid state science and technology. Volume 8:Number 4(2019)
• Page Start: P228
• Page End: P238
• Publication Date: 2019-04-22
• Subjects: Microelectronics - Semiconductor Materials -- Semiconductors - Silicon -- Silicon -- Computer Simulation -- Czochralski Si Crystal Growth -- Intrinsic Point Defect; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0011904jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : To explain and engineer intrinsic point defect behavior in large-diameter single crystal Si grown using the Czochralski (CZ) method, a unified model valid for all pulling processes, crystal resistivities, and electrically inactive impurity concentrations that couples the effects of thermal stress, dopants, and interstitial oxygen (Oi ) atoms is needed. We determined the thermal equilibrium concentration of intrinsic point defects (vacancy V and self-interstitial Si I ) in CZ-Si crystal as functions of thermal stresses, type and concentration of dopant, and the concentration of Oi atoms. Global heat transfer during crystal growth in a puller was simulated using STR Group's CGSim software package. A visual distribution of V and I concentrations inside a growing doped and thermally stressed Si ingot is very useful for improving the quality of large-diameter CZ-Si crystals.