Review—Hexagonal Boron Nitride Epilayers: Growth, Optical Properties and Device Applications. (7th September 2016)

• Record Type: Journal Article
• Authors: Jiang, H. X.; Lin, J. Y.
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 2(2017)
• Page Start: Q3012
• Page End: Q3021
• Publication Date: 2016-09-07
• Subjects: Detectors -- hexagonal boron nitride -- MOCVD -- Optical properties of semiconductors -- Pholuminescence -- wide bandgap semiconductors; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0031702jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : This paper provides a brief overview on recent advances made in authors' laboratory in epitaxial growth and optical studies of hexagonal boron nitride ( h- BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h- BN. It was observed that the near band edge emission of h- BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h- BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h- BN epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h- BN epilayers are related to nitrogen vacancies. By growing h- BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h -BN epilayers were shown to possess unique features. It is our belief that h- BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronic devices.