Influence of Post-Annealing on Properties of α-Ga2O3 Epilayer Grown by Halide Vapor Phase Epitaxy. (24th January 2019)

• Record Type: Journal Article
• Authors: Son, Hoki; Choi, Ye-Ji; Hwang, Jonghee; Jeon, Dae-Woo
• Is Part Of: ECS journal of solid state science and technology. Volume 8:Number 7(2019)
• Page Start: Q3024
• Page End: Q3027
• Publication Date: 2019-01-24
• Subjects: Supercapacitors -- α-Ga2O3 -- annealing -- HVPE; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0051907jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Effect of annealing to realize high-quality α-Ga2 O3 epilayers grown by halide vapor phase epitaxy has been studied. The structural and optical properties of α-Ga2 O3 changed with changing annealing duration. In particular, for an annealing duration of 3 min, the crystal quality improved from 51 and 2757 arcsec to 28 and 1539 arcsec for (0006) and (10–14) FWHM, respectively. X-ray photoelectron spectroscopy results confirmed that the oxygen gas during annealing reacted to compensate the oxygen vacancies in the α-Ga2 O3 epilayers. These results show that the optimized thermal annealing improved the crystal quality of α-Ga2 O3 epilayers.