Influence of Oxygen Pressure on Growth of Si-Doped β-(AlxGa1 − x)2O3 Thin Films on c-Sapphire Substrates by Pulsed Laser Deposition. (24th April 2019)

• Record Type: Journal Article
• Authors: Hassa, A.; Wenckstern, H. von; Vines, L.; Grundmann, M.
• Is Part Of: ECS journal of solid state science and technology. Volume 8:Number 7(2019)
• Page Start: Q3217
• Page End: Q3220
• Publication Date: 2019-04-24
• Subjects: Semiconductors; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0411907jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Ga 2 O 3 is a deep-UV transparent semiconducting oxide being interesting for solar-blind photo detectors e.g. for flame or missile plume detection. The bandgap of about 4.9 eV can be increased by alloying with Al 2 O 3 . We have investigated β-(Al, Ga)2 O3 thin films grown by pulsed laser deposition (PLD) on (00.1) Al 2 O 3 with regard to the influence of the growth parameters such as growth temperature (T g ) and oxygen partial pressure ( p (O2 )) on the structural, optical and electrical properties of the samples. The thin films have (-201) orientation and the cation incorporation strongly depends on the deposition parameters. At a given T g, the incorporation of Al is favored for lower p (O2 ) due to higher dissociation energy of the Al-O bond compared to the Ga-O bond. At a given p (O2 ), the incorporation of Al is favored for higher T g due to desorption of gallium sub-oxides during growth.